Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

ABSTRACT

There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. Ser. No. 17/206,024 filed onMar. 18, 2021, which is based upon and claims the benefit of priorityfrom Japanese Patent Application No. 2021-021417, filed on Feb. 15,2021, the entire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a method of manufacturing asemiconductor device, a substrate processing method, a substrateprocessing apparatus, and a recording medium.

BACKGROUND

As a process of manufacturing a semiconductor device by using asingle-wafer apparatus that processes substrates one by one, a step ofsupplying a gas to a substrate to form a film on the substrate may beoften carried out.

SUMMARY

Some embodiments of the present disclosure provide a technique capableof improving a processing uniformity and a throughput for eachsubstrate.

According to some embodiments of the present disclosure, there isprovided a technique that includes: (a) loading a substrate into aprocess container; (b) heating the substrate by supplying a first gas,which is heated when passing through a first heater installed at a firstgas supply line, to the substrate via a gas supplier; (c) supplying asecond gas, which flows through a second gas supply line different fromthe first gas supply line, to the substrate mounted on a substratemounting table in the process container, via the gas supplier; and (d)lowering a temperature of the gas supplier by supplying a third gas,which has a temperature lower than that of the first gas, to the gassupplier between (b) and (c).

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate some embodiments of the presentdisclosure.

FIG. 1 is a schematic configuration view of a substrate processingapparatus suitably used in embodiments of the present disclosure, inwhich a portion of a process furnace is shown in a vertical crosssection.

FIG. 2 is a schematic configuration diagram of a controller 280 of asubstrate processing apparatus suitably used in some embodiments of thepresent disclosure, in which a control system of the controller 280 isshown in a block diagram.

FIG. 3 is a schematic configuration view of a main part of a substrateprocessing apparatus suitably used in a first modification of thepresent disclosure.

FIG. 4 is a schematic configuration view of a main part of a substrateprocessing apparatus suitably used in other embodiments of the presentdisclosure.

FIG. 5 is a schematic configuration view of a main part of a substrateprocessing apparatus suitably used in other embodiments of the presentdisclosure.

DETAILED DESCRIPTION Embodiments of the Present Disclosure

Some embodiments of the present disclosure will now be described mainlywith reference to FIG. 1. Figures used in the following description areschematic, and dimensional relationships, ratios, and the like amongelements on the figures do not always match actual ones. Further,dimensional relationships, ratios, and the like among elements on thefigures do not always match each other even among a plurality offigures.

(1) CONFIGURATION OF SUBSTRATE PROCESSING APPARATUS

As shown in FIG. 1, a substrate processing apparatus 100 includes aprocess container 202. The process container 202 is configured as, forexample, a flat sealed container having a circular cross section. Theprocess container 202 includes an upper container 2021 made of, forexample, a non-metal material such as quartz or ceramics, and a lowercontainer 2022 made of, for example, a metal material such as aluminum(Al) or stainless steel (SUS). In the process container 202, a processchamber (process space) 201 in which a wafer 200 such as a silicon waferas a substrate is processed is formed at an upper side (a space above asubstrate mounting stand 212 as a substrate mounting table to bedescribed below) of the process container 202, and a transfer chamber(transfer space) 203 configured to transfer the wafer 200 is formed in aspace surrounded by the lower container 2022 on a lower side of theprocess container 202. A transfer container 700 is installed to beadjacent to the lower container 2022 of the process container 202. Atransfer chamber (transfer space) 600 configured to transfer the wafer200 is installed in the transfer container 700, and a transfer mechanism500 such as a transfer robot is installed in the transfer chamber 600.

A substrate loading/unloading port 206 is installed at a side surface ofthe lower container 2022. The substrate loading/unloading port 206 isconfigured to be capable of being opened/closed by a gate valve 205. Byopening the gate valve 205, an interior of the process container 202(the transfer space 203) and an interior of the transfer container 700(the transfer chamber 600) may be in fluid communication with each othersuch that the wafer 200 may be loaded/unloaded in/out of the transferspace 203 by the transfer mechanism 500. A plurality of lift pins 207configured to temporarily support the wafer 200 are installed at abottom portion of the lower container 2022.

A substrate support (susceptor) 210 configured to support the wafer 200is installed at the process chamber 201. The substrate support 210mainly includes a substrate mounting surface (substrate mounting plate)211 on which the wafer 200 is mounted, a substrate mounting stand 212having the substrate mounting surface 211 formed thereon, and a heater213 as a second heating part included in the substrate mounting stand212. The substrate support 210 further includes a temperaturemeasurement terminal 216 configured to measure a temperature of theheater 213. The temperature measurement terminal 216 is connected to atemperature measuring part 221 via a wiring 220. The substrate mountingsurface (substrate mounting plate) 211 may also be referred to as asusceptor.

The substrate mounting stand 212 is provided with through-holes 214through which the lift pins 207 penetrate, at positions corresponding tothe lift pins 207. A wiring 222 configured to supply electric power isconnected to the heater 213. The wiring 222 is connected to a heaterelectric power controller 223.

The temperature measuring part 221 and the heater electric powercontroller 223 are connected to a controller 280 to be described below.The controller 280 transmits control information to the heater electricpower controller 223 based on temperature information measured by thetemperature measuring part 221. The heater electric power controller 223controls the heater 213 based on the received control information.

The substrate mounting stand 212 is supported by a shaft 217. The shaft217 penetrates the bottom portion of the process container 202 and isfurther connected to an elevator 218 outside the process container 202.

The elevator 218 mainly includes a support shaft 218 a configured tosupport the shaft 217, and an actuator 218 b configured to elevateand/or rotate the support shaft 218 a. The actuator 218 b includes, forexample, an elevating mechanism 218 c including a motor configured toperform an elevation, and a rotation mechanism 218 d such as a gearconfigured to rotate the support shaft 218 a. A smoothing agent such asgrease is applied on the elevating mechanism 218 c and the rotationmechanism 218 d for their smooth operations. When there is no need torotate the support shaft 218 a, the rotation mechanism 218 d may beomitted. In this case, the actuator 218 b is configured to raise orlower the support shaft 218 a.

The elevator 218 may include an instruction part 218 e which is a partof the elevator 218 and configured to instruct the actuator 218 b toperform the elevation and/or the rotation. In that case, the instructionpart 218 e is electrically connected to the controller 280. Further, inthat case, the instruction part 218 e controls the actuator 218 b basedon an instruction of the controller 280. As described below, theactuator 218 b controls the elevating operation of the support shaft 218a such that the substrate mounting stand 212 moves to a wafer transferposition (a position of the substrate mounting stand 212 indicated by abroken line in FIG. 1) or a wafer processing position (a position of thesubstrate mounting stand 212 in FIG. 1).

By actuating the elevator 218 to raise or lower the shaft 217 and thesubstrate mounting stand 212, the substrate mounting stand 212 may raiseor lower the wafer 200 mounted on the substrate mounting surface 211. Acircumference of a lower end portion of the shaft 217 is covered with abellows 219, whereby the interior of the process chamber 201 is keptairtight.

The substrate mounting stand 212 is lowered such that the substratemounting surface 211 is at the position of the substrateloading/unloading port 206 (the wafer transfer position) when the wafer200 is transferred, and is raised such that the wafer 200 is at theprocessing position (the wafer processing position) in the processchamber 201 when the wafer 200 is processed.

When the substrate mounting stand 212 is lowered to the wafer transferposition, the upper end portions of the lift pins 207 protrude from theupper surface of the substrate mounting surface 211 such that the liftpins 207 are in a state where the wafer 200 may be supported from belowby the lift pins 207 (see the substrate mounting stand 212 indicated bythe broken line and the wafer 200 indicated by a dotted line in FIG. 1).Further, when the substrate mounting stand 212 is raised to the waferprocessing position with the wafer 200 supported by the lift pins 207,the lift pins 207 is buried from the upper surface of the substratemounting surface 211 while the substrate mounting stand 212 is beingraised, whereby the wafer 200 is supported from below by the substratemounting surface 211 supports the wafer 200.

A shower head 230 as a gas distribution mechanism is installed at theupper portion of the process chamber 201 (an upstream side of gas flow)and at a position facing the substrate mounting surface 211. A lid 231of the shower head 230 is made of, for example, electrically conductiveand thermally conductive metal. In the following description, forconvenience of description, the upstream side of the gas flow in a spacewhere a gas may flow is also simply referred to as an upstream side.Further, in the following description, for convenience of description, adownstream side of gas flow in a space where a gas may flow is alsosimply referred to as a downstream side.

Further, the lid 231 of the shower head is provided with a through-hole231 a. A gas supply pipe 241 is inserted in the through-hole 231 a. Thegas supply pipe 241 inserted in the through-hole 231 a includes aleading end 241 a inserted in the shower head 230, and a flange 241 bfixed to the lid 231. The gas supply pipe 241 has a function ofdistributing a gas supplied into a shower head buffer chamber 232 whichis a space formed in the shower head 230. The leading end 241 a of thegas supply pipe 241 is formed in, for example, a columnar shape and isprovided with a distribution hole on a side surface of the columnarshape. A gas supplied from the gas supply pipe 241 is supplied into theshower head buffer chamber 232 via the distribution hole formed at theleading end 241 a.

Further, the shower head 230 includes a gas supplier 234 configured tosupply a gas supplied from a gas supply system to be described below, tothe wafer 200. The shower head buffer chamber 232 is located at theupstream side of the gas supplier 234, and the process chamber 201 islocated on the downstream side of the gas supplier 234. The gas supplier234 is disposed on the upper side of the substrate mounting surface 211to face the substrate mounting surface 211. The gas supplier 234 isprovided with a plurality of through-holes 234 b as a second gas supplyport. Each of the through-holes 234 b is constituted by a tubularstructure (tubular portion) 234 d. The tubular structure 234 d isprovided to penetrate an upper wall 234 e of the gas supplier 234. Theupstream side of the tubular structure 234 d is in fluid communicationwith the shower head buffer chamber 232, and the downstream side of thetubular structure 234 d is in fluid communication with the processchamber 201. Therefore, the shower head buffer chamber 232 is in fluidcommunication with the process chamber 201 via the plurality ofthrough-holes 234 b formed at the gas supplier 234.

A buffer space 233 is formed by a region constituting the gas supplier234 and surrounded by the upper wall 234 e facing the substrate mountingsurface 211 and a side wall 234 f. The buffer space 233 is configured asa part of the gas supplier 234.

The gas supplier 234 is provided with a plurality of through-holes 234 aas a first gas supply port to be adjacent to the through-holes 234 b.Each of the through-holes 234 a is constituted by a tubular structure(tubular portion) 234 g. The tubular structure 234 g is installed toprotrude into the buffer space 233. The upstream side of the tubularstructure 234 g is in fluid communication with the buffer space 233, andthe downstream side of the tubular structure 234 g is in fluidcommunication with the process chamber 201. Therefore, the buffer space233 is in fluid communication with the process chamber 201 via theplurality of through-holes 234 a formed at the gas supplier 234.

A common gas supply pipe 242 is connected to the gas supply pipe 241inserted in the through-hole 231 a. Interiors of the gas supply pipe 241and the common gas supply pipe 242 are in fluid communication with eachother. According to the aforementioned configuration, a gas suppliedfrom the common gas supply pipe 242 is supplied into the shower head 230via the gas supply pipe 241 and the through-hole 231 a.

Gas supply pipes 243 a, 244 a, and 245 a are connected to the common gassupply pipe 242. Among them, the gas supply pipe 244 a is connected tothe common gas supply pipe 242 via a remote plasma unit (RPU) 244 e as aplasma generator (plasma source).

At the gas supply pipes 243 a, 244 a, and 245 a, gas supply sources 243b, 244 b, and 245 b, MFCs (Mass Flow Controllers) 243 c, 244 c, and 245c, which are flow rate controllers, and valves 243 d, 244 d, and 245 d,which are opening/closing valves, are installed sequentially from theupstream side of gas flow, respectively.

Downstream ends of gas supply pipes 246 a and 247 a are connected to thegas supply pipes 243 a and 244 a at the downstream side of the valves243 d and 244 d, respectively. At the gas supply pipes 246 a and 247 a,gas supply sources 246 b and 247 b, MFCs 246 c and 247 c, and valves 246d and 247 d as opening/closing valves are respectively installedsequentially from the upstream side of gas flow. The gas supply pipes243 a to 247 a are made of, for example, a metal material such as SUS.

A precursor gas is supplied from the gas supply source 243 b into theshower head 230 via the MFC 243 c, the valve 243 d, the gas supply pipe243 a, the common gas supply pipe 242, the gas supply pipe 241, and thethrough-hole 231 a.

A reaction gas is supplied from the gas supply source 244 b into theshower head 230 via the MFC 244 c, the valve 244 d, the gas supply pipe244 a, the RPU 244 e, the common gas supply pipe 242, the gas supplypipe 241, and the through-hole 231 a. At this time, the reaction gas isexcited into a plasma state by the RPU 244 e and is supplied to thewafer 200 in the process chamber 201 via the common gas supply pipe 242,the gas supply pipe 241, the through-hole 231 a, and the shower head230.

An inert gas and a cleaning gas are supplied from the gas supply source245 b into the shower head 230 via the MFC 245 c, the valve 245 d, thegas supply pipe 245 a, the common gas supply pipe 242, the gas supplypipe 241, and the through-hole 231 a. The inert gas is mainly suppliedfrom the gas supply source 245 b when the wafer 200 is processed, andthe cleaning gas is mainly supplied from the gas supply source 245 bwhen the interior of the shower head 230 and the interior of the processchamber 201 are cleaned. The inert gas acts as a purge gas that purges aretained gas or a residual gas in the process container 202 (the processchamber 201) and in the shower head 230. In addition, the inert gas mayalso act as a dilution gas that dilutes each gas or as a carrier gasthat promotes the flow of each gas. As the cleaning gas, a halogen-basedgas, for example, a fluorine (F)-containing gas or the like, may beused.

An inert gas is supplied from the gas supply source 246 b into theshower head 230 via the MFC 246 c, the valve 246 d, the gas supply pipe246 a, the common gas supply pipe 242, the gas supply pipe 241, and thethrough-hole 231 a. The inert gas acts as a purge gas, a carrier gas, adilution gas, or the like.

An inert gas is supplied from the gas supply source 247 b into theshower head 230 via the MFC 247 c, the valve 247 d, the gas supply pipe247 a, the RPU 244 e, the common gas supply pipe 242, the gas supplypipe 241, and the through-hole 231 a. The inert gas acts as a purge gas,a carrier gas, a dilution gas, or the like.

A precursor gas supply system 243 mainly includes the gas supply pipe243 a, the MFC 243 c, and the valve 243 d. The gas supply source 243 bmay be included in the precursor gas supply system 243. A first inertgas supply system mainly includes the gas supply pipe 246 a, the MFC 246c, and the valve 246 d. The gas supply source 246 b may be included inthe first inert gas supply system. A reaction gas supply system 244mainly includes the gas supply pipe 244 a, the MFC 244 c, and the valve244 d. The gas supply source 244 b may be included in the reaction gassupply system 244. A second inert gas supply system mainly includes thegas supply pipe 247 a, the MFC 247 c, and the valve 247 d. The gassupply source 247 b may be included in the second inert gas supplysystem. A gas supply system 245 mainly includes the gas supply pipe 245a, the MFC 245 c, and the valve 245 d. The gas supply source 245 b maybe included in the gas supply system 245.

Further, the first inert gas supply system, the gas supply pipe 241, andthe common gas supply pipe 242 may be included in the precursor gassupply system 243. Further, the second inert gas supply system, the RPU244 e, the gas supply pipe 241, and the common gas supply pipe 242 maybe included in the reaction gas supply system 244.

Each or both of the precursor gas and the reaction gas are also referredto as a processing gas or a second gas, and each or both of theprecursor gas supply system 243 and the reaction gas supply system 244are also referred to as a processing gas supply system, a second gassupply system, or a second gas supply line. Since the inert gas is anon-reactive gas and the processing gas (precursor gas or reaction gas)is a reactive gas, the processing gas may also be referred to as areactive gas. Further, when a film is formed by the processing gas, theprocessing gas may also be referred to as a film-forming gas.

A gas introduction hole configured to supply a gas into the buffer space233 is formed at the upper wall 234 e of the gas supplier 234. A gassupply pipe 236 is connected to this gas introduction hole. A gas supplypipe 248 a is connected to the gas supply pipe 236, and a gas supplysource 248 b, a MFC 248 c, a valve 248 d, and a heater 248 e as a firstheating part are installed at the gas supply pipe 248 a sequentiallyfrom the upstream side of gas flow.

A first gas is supplied from the gas supply source 248 b into the bufferspace 233 via the MFC 248 c, the valve 248 d, the gas supply pipe 248 a,the heater 248 e, the gas supply pipe 236, and the like. The heater 248e is configured to be capable of heating the first gas, which passesthrough the heated 248 e, to a predetermined temperature according to aninstruction of the controller 280. Hereinafter, as a matter ofconvenience, a gas heated in this manner is also referred to as aheating gas. As the first gas, for example, at least one selected fromthe group of an inert gas such as a nitrogen (N₂) gas and a helium (He)gas and a hydrogen (H₂) gas may be used. In the embodiments, a casewhere, for example, an inert gas is used as the first gas will bedescribed.

A first gas supply system 248 mainly includes the gas supply pipe 248 a,the MFC 248 c, and the valve 248 d. The gas supply source 248 b, theheater 248 e, and the gas supply pipe 236 may be included in the firstgas supply system 248. The first gas supply system 248 is also referredto as a first gas supply line.

A temperature measuring part 249 configured to measure the temperatureof the heater 248 e is installed at the heater 248 e. Further, a heatercontroller 250 configured to control the heater 248 e is connected tothe heater 248 e. The heater 248 e is controlled by the controller 280via the heater controller 250.

A gas introduction hole configured to supply a gas into the buffer space233 at the side wall 234 f of the gas supplier 234. A gas supply pipe258 a is connected to this gas introduction hole. A gas supply source258 b, a MFC 258 c, and a valve 258 d are installed at the gas supplypipe 258 a sequentially from the upstream side of gas flow.

A third gas is supplied from the gas supply source 258 b into the bufferspace 233 via the MFC 258 c, the valve 258 d, the gas supply pipe 258 a,and the like. As the third gas, for example, at least one selected fromthe group of an inert gas such as a N₂ gas or a He gas, a H₂ gas, adiluted H₂ gas, and an activated H₂ gas may be used. In the embodiments,a case where, for example, an inert gas is used as the third gas will bedescribed.

A third gas supply system 258 mainly includes the gas supply pipe 258 a,the MFC 258 c, and the valve 258 d. The gas supply source 258 b may beincluded in the third gas supply system 258. The third gas supply system258 is also referred to as a third gas supply line.

A gas introduction hole configured to supply a gas into the transferspace 203 is formed at the side surface of the lower container 2022. Agas supply pipe 256 is connected to this gas introduction hole. A gassupply pipe 259 a is connected to the gas supply pipe 256. A gas supplysource 259 b, a MFC 259 c, a valve 259 d, and a heater 259 e as a fourthheating part are installed at the gas supply pipe 259 a sequentiallyfrom the upstream side of gas flow.

A fourth gas is supplied from the gas supply source 259 b into thetransfer space 203 via the MFC 259 c, the valve 259 d, the gas supplypipe 259 a, the heater 259 e, the gas supply pipe 256, and the like. Asthe fourth gas, for example, at least one selected from the group of aninert gas such as a N₂ gas and a He gas, a H₂ gas, a diluted H₂ gas, andan activated H₂ gas may be used. In the embodiments, a case where, forexample, an inert gas is used as the fourth gas will be described. Theheater 259 e is configured to be capable of heating the inert gas, whichpasses through the heater 259 e, to a predetermined temperatureaccording to an instruction of the controller 280.

A fourth gas supply system 259 mainly includes the gas supply pipe 259a, the MFC 259 c, and the valve 259 d. The gas supply source 259 b, theheater 259 e, and the gas supply pipe 256 may be included in the fourthgas supply system 259. The fourth gas supply system 259 is also referredto as a fourth gas supply line.

An exhauster configured to exhaust an internal atmosphere of the processcontainer 202 includes a plurality of exhaust pipes connected to theprocess container 202. Specifically, the exhauster includes an exhaustpipe 261 connected to the transfer space 203, an exhaust pipe 262connected to the process chamber 201, and an exhaust pipe 263 connectedto the buffer space 233. Further, an exhaust pipe 264 is connected toeach of the downstream ends of the exhaust pipes 261, 262, and 263.

An exhaust hole configured to exhaust an internal atmosphere of thetransfer space 203 is formed at the side surface of the lower container2022. The exhaust pipe 261 is connected to this exhaust hole. A TMP(Turbo Molecular Pump) 265, which is a vacuum pump that realizes a highvacuum or an ultra-high vacuum, is connected to the exhaust pipe 261.Valves 266 and 267, which are opening/closing valves, are installed atthe upstream side and the downstream side of the TMP 265 in the exhaustpipe 261, respectively.

An exhaust hole configured to exhaust an internal atmosphere of theprocess chamber 201 is formed at the side of the process chamber 201.The exhaust pipe 262 is connected to this exhaust hole. An APC (AutoPressure Controller) 276, which is a pressure controller configured tocontrol the interior of the process chamber 201 to a predeterminedpressure, is installed at the exhaust pipe 262. The APC 276 includes avalve body whose opening degree may be adjusted, and is configured to becapable of adjusting an internal conductance of the exhaust pipe 262 byadjusting the opening degree of the valve body according to aninstruction from the controller 280. Further, valves 275 and 277, whichare opening/closing valves, are installed at the exhaust pipe 262 on theupstream side and the downstream side of the APC 276 respectively.

An exhaust hole configured to exhaust an internal atmosphere of thebuffer space 233 is formed at the upper wall 234 e of the gas supplier234. The exhaust pipe 263 is connected to this exhaust hole. A TMP 295is installed at the exhaust pipe 263. Valves 296 and 297, which areopening/closing valves, are installed at the exhaust pipe 263 on theupstream side and the downstream side of the TMP 295, respectively.

ADP (Dry Pump) 278 is connected to the exhaust pipe 264. Morespecifically, the exhaust pipes 263, 262, and 261 are connected to theexhaust pipe 264 at the upstream side thereof, and the DP 278 isconnected to the exhaust pipe 264 at the downstream side thereof. The DP278 exhausts the atmospheres of the buffer space 233, the processchamber 201, and the transfer space 203 via the exhaust pipes 263, 262,and 261, respectively. The DP 278 also functions as an auxiliary pumpwhen the TMPs 265 and 295 operate. That is, since it is difficult forthe TMPs 265 and 295, which are a high vacuum (or ultra-high vacuum)pumps, to perform an exhaust alone up to the atmospheric pressure, theDP 278 is used as an auxiliary pump configured to perform the exhaust upto the atmospheric pressure.

As shown in FIG. 1, the substrate processing apparatus 100 includes thecontroller 280 configured to control operations of various parts of thesubstrate processing apparatus 100.

As shown in FIG. 2, the controller 280, which is a controller (controlmeans), may be configured as a computer including a CPU (CentralProcessing Unit) 280 a, a RAM (Random Access Memory) 280 b, a memory 280c, and an I/O port 280 d. The RAM 280 b, the memory 280 c, and the I/Oport 280 d are configured to be capable of exchanging data with the CPU280 a via an internal bus 280 e. An input/output device 289 configuredas, for example, a touch panel and the like or an external memory 288,may be connected to the controller 280.

The memory 280 c includes, for example, a flash memory, a HDD (Hard DiskDrive), a SSD (Solid State Drive), or the like. A control programconfigured to control operations of the substrate processing apparatus100, a process recipe in which sequences, conditions, and the like ofsubstrate processing to be described below are written, and the like arereadably stored in the memory 280 c. The process recipe functions as aprogram configured to allow the controller 280 to cause the substrateprocessing apparatus 100 to execute each sequence in the substrateprocessing to be described below, to obtain an expected result.Hereinafter, the process recipe and the control program may be generallyand simply referred to as a “program.” Furthermore, the process recipemay be simply referred to as a “recipe.” When the term “program” is usedherein, it may indicate a case of including the recipe only, a case ofincluding the control program only, or a case of including both therecipe and the control program. The RAM 280 b is configured as a memoryarea (work area) in which a program or data read by the CPU 280 a istemporarily stored.

The I/O port 280 d is connected to the gate valve 205, the transfermechanism 500, the elevator 218, the APC 276, the TMPs 265 and 295, theDP 278, the RPU 244 e, the MFCs 243 c, 244 c, 245 c, 246 c, 247 c, 248c, 258 c, and 259 c, the valves 243 d, 244 d, 245 d, 246 d, 247 d, 248d, 258 d, 259 d, 266, 267, 275, 277, 296, and 297, the heaters 213, 248e, and 259 e, and the like.

The CPU 280 a is configured to read and execute the control program fromthe memory 280 c. The CPU 280 a is also configured to be capable ofreading the recipe from the memory 280 c according to an input of anoperation command from the input/output device 289. The CPU 280 a isconfigured to control the opening/closing operation of the gate valve205, the transferring operation of the wafer 200 by the transfermechanism 500, the elevating operation of the substrate mounting stand212 by the elevator 218, the adjusting operation of the internalpressure of the process chamber 201 by the APC 276, the on/off controlof the TMPs 265 and 295, the on/off control of the DP 278, the on/offcontrol of plasma by the RPU 244 e, the flow rate regulating operationof various types of gases by the MFCs 243 c, 244 c, 245 c, 246 c, 247 c,248 c, 258 c, and 259 c, the opening/closing control of the valves 243d, 244 d, 245 d, 246 d, 247 d, 248 d, 258 d, 259 d, 266, 267, 275, 277,296, and 297, the on/off control and the temperature regulatingoperation of the heaters 213, 248 e, and 259 e, and the like, accordingto contents of the read recipe.

The controller 280 may be configured by installing, on the computer, theaforementioned program stored in the external memory 288. Examples ofthe external memory 288 may include a magnetic disk such as a HDD, anoptical disc such as a CD, a magneto-optical disc such as a MO, asemiconductor memory such as a USB memory or a SSD, and the like. Thememory 280 c or the external memory 288 is configured as acomputer-readable recording medium. Hereinafter, the memory 280 c andthe external memory 288 may be generally and simply referred to as a“recording medium.” When the term “recording medium” is used herein, itmay indicate a case of including the memory 280 c only, a case ofincluding the external memory 288 only, or a case of including both thememory 280 c and the external memory 288. Furthermore, the program maybe provided to the computer by using a communication means such as theInternet or a dedicated line, instead of using the external memory 288.

(2) SUBSTRATE PROCESSING

As a process of manufacturing a semiconductor device by using theabove-described substrate processing apparatus 100, a processingsequence of forming a thin film on a wafer 200 as a substrate in aprocess container 202 will be described. In the following description,the operations of various parts constituting the substrate processingapparatus 100 are controlled by the controller 280.

A processing sequence in some embodiments includes:

a step a of loading the wafer 200 into the process container 202;

a step b of heating the wafer 200 by supplying a first gas, which isheated when passing through a heater 248 e installed at a first gassupply system 248, to the wafer 200 via a gas supplier 234;

a step c of supplying a second gas, which flows through a second gassupply system different from the first gas supply system 248, to thewafer 200 mounted on a substrate mounting stand 212 in the processcontainer 202, via the gas supplier 234; and

a step d of lowering the temperature of the gas supplier 234 bysupplying a third gas, which has a temperature lower than that of thefirst gas, to the gas supplier 234 between the step b and the step c.

The processing sequence in the embodiments further includes, as anexample, before the step c, a step e of holding the wafer 200 in a stateof being mounted on the substrate mounting stand 212, and heating thewafer 200 from a rear surface side by heat conduction from the substratemounting stand 212 heated by the heater 213.

The processing sequence in the embodiments further includes, as anexample, before the step a, a step f of heating the gas supplier 234 byradiation (also referred to as emission) from the substrate mountingstand 212 heated by the heater 213. When the substrate mounting stand212 is made of quartz, ceramics, or the like capable of transmittinglight (electromagnetic waves), radiation from the heater 213 transmitsthrough the substrate mounting stand 212 and is delivered to the gassupplier 234 such that the gas supplier 234 may be heated. Therefore, inthis case, the gas supplier 234 is heated by the radiation from theheater 213, the radiation from the substrate mounting stand 212 heatedby the heater 213, and the like.

The processing sequence in the embodiments further includes, as anexample, between the step a and the step b, a step g of heating thewafer 200 by supplying a fourth gas, which is heated when passingthrough a heater 259 e installed at a fourth gas supply system 259, tothe wafer 200 in a state where the wafer 200 is accommodated in atransfer space 203 installed in the process container 202.

The processing sequence in the embodiments further includes, as anexample, after the step c, a step h of cooling the wafer 200 bysupplying the third gas to the wafer 200.

In the following, an example of forming a nitride film as a film will bedescribed. Here, the nitride film includes not only a silicon nitridefilm (SiN film) but also a nitride film containing carbon (C), oxygen(O), boron (B), or the like. That is, the nitride film includes asilicon nitride film (SiN film), a silicon carbonitride film (SiCNfilm), a silicon oxynitride film (SiON film), a silicon oxycarbonitridefilm (SiOCN film), a silicon borocarbonitride film (SiBCN film).), asilicon boronitride film (SiBN film), a silicon oxyborocarbonitride film(SiBOCN film), a silicon oxyboronitride film (SiBON film), and the like.Hereinafter, an example of forming a SiN film as a nitride film will bedescribed.

In the following, as described above, each of the precursor gas and thereaction gas may be referred to as the second gas. Further, in thefollowing, in the step b, an example of performing a cycle apredetermined number of times (m times, where m is an integer of 1 ormore), the cycle including a step of supplying the precursor gas to thewafer 200 and a step of supplying the reaction gas to the wafer 200,will be described. The step of supplying the precursor gas and the stepof supplying the reaction gas may be performed alternately, that is,non-simultaneously, or these steps may be performed simultaneously. Inthe following, an example of performing these steps alternately will bedescribed. In the present disclosure, as a matter of convenience, such agas supply sequence may be represented as follows. The same notation isused in other embodiments, modifications, and the like to be describedbelow.

(Precursor gas→reaction gas)×m

When the term “wafer” is used in the present disclosure, it may refer to“a wafer itself” or “a laminated body of a wafer and certain layers orfilms formed on a surface of the wafer.” When the phrase “a surface of awafer” is used in the present disclosure, it may refer to “a surface ofa wafer itself” or “a surface of a certain layer and the like formed ona wafer.” When the expression “a certain layer is formed on a wafer” isused in the present disclosure, it may mean that “a certain layer isformed directly on a surface of a wafer itself” or that “a certain layeris formed on a layer and the like formed on a wafer.” When the term“substrate” is used in the present disclosure, it is synonymous with theterm “wafer.”

(Gas Supplier Heating Step: Step f)

The heaters 213, 248 e, and 259 e are turned on, and heating andtemperature control of an object by the heaters 213, 248 e, and 259 eare started. Here, set temperatures of the heaters 248 e and 259 e areset to a temperature in the range of, for example, 50 to 500 degrees C.,specifically 100 to 400 degrees C. Further, the set temperature of theheater 213 is set to a temperature in the range of, for example, 10 to500 degrees C., specifically 20 to 300 degrees C. After the temperaturesof the heaters 213, 248 e, and 259 e are stabilized, the substratemounting stand 212 is lowered to the transfer position (wafer transferposition) of the wafer 200, and the lift pins 207 are passed through thethrough-holes 214 of the substrate mounting stand 212. In parallel withthis operation, the internal atmosphere of the transfer space 203 isexhausted such that the internal pressure of the transfer space 203becomes equal to or lower than the internal pressure of the transferchamber 600. At this time, the gas supplier 234 is in a state of beingheated from below by radiation from the heater 213, radiation from thesubstrate mounting stand 212 heated by the heater 213, and the like.Since the gas supplier 234 has a large heat capacity and therefore ittakes time for the gas supplier 234 to be heated, the gas supplier 234may be pre-heated in this way before the step a to be described below.Further, in the step f, raised temperatures of the heaters 213, 248 e,and 259 e are maintained in each step to be described below. Further, adistance between the gas supplier 234 and the substrate mounting stand212 in the step f may be smaller (shorter) than a distance between thegas supplier 234 and the substrate mounting stand 212 in the step c tobe described below. When the distance between the gas supplier 234 andthe substrate mounting stand 212 is shortened, a structure is configuredsuch that an outer peripheral side of the substrate mounting stand 212shown in FIG. 1 and members in the process container 202 do not comeinto contact with each other. Further, in the step f, the inert gas, thefirst gas, and the fourth gas may be supplied from the gas supply system245, the first gas supply system 248, and the fourth gas supply system259 into the process chamber 201 and the transfer space 203,respectively. Further, in the step f, the heaters 248 e or the heater259 e may be turned off. For example, the heater 248 e is turned on andthe heater 259 e is turned off.

(Substrate Loading Step: Step a)

Subsequently, the gate valve 205 is opened such that the interior of thetransfer space 203 is in fluid communication with the interior of thetransfer chamber 600. Then, the wafer 200 is loaded from the transferchamber 600 into the transfer space 203 by using the transfer mechanism500 installed in the transfer chamber 600.

(Substrate Heating Step: Step g)

Then, the inert gas, the first gas, and the fourth gas are supplied fromthe gas supply system 245, the first gas supply system 248, and thefourth gas supply system 259 into the process chamber 201 and thetransfer space 203, respectively. In parallel with this, the internalatmospheres of the process chamber 201 and the transfer space 203 areexhausted via the exhaust pipe 261. The first gas and the fourth gassupplied from the first gas supply system 248 and the fourth gas supplysystem 259 are heated by the heaters 248 e and 259 e, supplied into theprocess chamber 201 and the transfer space 203, respectively, and areexhausted via the exhaust pipe 261. At this time, the heated first gasand fourth gas are supplied to the wafer 200 in the transfer space 203,and these gases come into contact with the wafer 200. In this way, thewafer 200 in the transfer space 203 is heated (pre-heated). Here, settemperatures of the heaters 248 e and 259 e when heating the wafer 200are set to a temperature in the range of, for example, 50 to 500 degreesC., specifically 100 to 400 degrees C. in some embodiments. The step gmay not be performed and may be omitted. For example, when it is desiredto shorten a time needed to heat (pre-heat) the wafer 200, the step gmay be performed before the step b. Further, a supply amount (supplyflow rate) of the inert gas from the gas supply system 245 may be asupply amount (supply flow rate) by which other gases may be preventedfrom penetrating from the process chamber 201 into the gas supply system245.

(Substrate Heating/Substrate Radiation Heating Step: Step b)

The wafer 200 can be placed on the lift pins 207 by loading the wafer200 into the transfer space 203 by the transfer mechanism 500, holdingthe wafer 200 over the lift pins 207, and then lowering the transfermechanism 500 to mount the wafer 200 on the lift pins 207. Then, thetransfer mechanism 500 is moved out of the transfer space 203, and thesubstrate loading/unloading port 206 is closed by the gate valve 205. Asa result, the wafer 200 may be held on the lift pins 207 in the transferspace 203.

In the step b, the supply of the inert gas from the gas supply system245 is continued following the step g. However, after the substrateloading/unloading port 206 is closed by the gate valve 205, the supplyof the inert gas from the gas supply system 245 is stopped.

Further, in the step b, following the step g, the supply of the firstgas and the supply of the fourth gas from the first gas supply system248 and the fourth gas supply system 259 to the wafer 200 in thetransfer space 203 are continued, respectively. Further, the exhaust ofthe internal atmospheres of the process chamber 201 and the transferspace 203 from the exhaust pipe 261 are continued.

Specifically, in the step b, the valves 248 d and 259 d are maintainedin the opened state, such that the first gas and the fourth gas flowthrough the gas supply pipes 248 a and 259 a, respectively. Flow ratesof the first gas and the fourth gas are regulated by the MFCs 248 c and259 c, and the first gas and the fourth gas are heated by the heaters248 e and 259 e, respectively. Then, the first gas and the fourth gasare supplied into the process chamber 201 and the transfer space 203 viathe gas supply pipes 236 and 256, respectively, and are exhausted viathe exhaust pipe 261. At this time, the heated first gas and fourth gasare supplied to the wafer 200 in the transfer space 203, and these gasescome into contact with the wafer 200. In this way, the wafer 200 in thetransfer space 203 is heated. Here, the set temperatures of the heaters248 e and 259 e when heating the wafer 200 is set to a temperature inthe range of, for example, 50 to 500 degrees C., specifically 100 to 400degrees C.

Processing conditions in the step b are exemplified as follows.

Processing temperature: 10 to 500 degrees C., specifically 20 to 300degrees C. in some embodiments

Processing pressure: 10 to 13,333 Pa, specifically 100 to 10,000 Pa insome embodiments

First gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to 10slm in some embodiments

First gas supply time: 1 to 300 seconds, specifically 5 to 60 seconds insome embodiments

Fourth gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to 5slm in some embodiments

Fourth gas supply time: 0.1 to 300 seconds, specifically 5 to 60 secondsin some embodiments

Inert gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to 5slm in some embodiments

Inert gas supply time: 0.1 to 150 seconds, specifically 2 to 30 secondsin some embodiments

The processing temperature shown here means the temperature of the wafer200, that is, a pre-heating target temperature of the wafer 200.

The notation of a numerical range such as “10 to 500 degrees C.” in thepresent disclosure means that a lower limit value and an upper limitvalue are included in the numerical range. Therefore, for example, “10to 500 degrees C.” means “10 degrees C. or higher and 500 degrees C. orlower.” The same applies to other numerical ranges. Further, in thepresent disclosure, the processing temperature means the temperature ofthe wafer 200 or the internal temperature of the process chamber 201,and the processing pressure means the internal pressure of the processchamber 201. Further, the gas supply flow rate of 0 slm means a casewhere no gas is supplied. The same applies to the following description.

Examples of the first gas, the fourth gas, and the inert gas may includerare gases such as a nitrogen (N₂) gas, an argon (Ar) gas, a helium (He)gas, a neon (Ne) gas, and a xenon (Xe) gas. One or more of these gasesmay be used as the first gas, the fourth gas, and the inert gas. Thetype of gas when the inert gas is used in each of the other steps may bethe same as the type of gas described here.

The first gas supplied from the first gas supply system 248 in the stepb is heated by the heater 248 e, supplied to the wafer 200 via thebuffer space 233 (the gas supplier 234), and comes into contact with thesurface of the wafer 200. In this way, the wafer 200 is heated fromabove (front surface side). Further, since the wafer 200 is mounted onthe lift pins 207 and is held in a floating state without being mountedon the substrate mounting stand 212, it is heated by radiation from theheater 213 included in the substrate mounting stand 212, radiation fromthe substrate mounting stand 212 heated by the heater 213, and the like.In this way, the wafer 200 is also heated from below (rear surfaceside). Further, since the wafer 200 is mounted on the lift pins 207, thefourth gas supplied from the fourth gas supply system 259 and heated bythe heater 259 e also infiltrates a space between the wafer 200 and thesubstrate mounting stand 212 and comes into contact with the rearsurface of the wafer 200. In this way, the wafer 200 is further heatedfrom below (rear surface side). As a result, the wafer 200 is heatedfrom both the front and rear sides. Further, at this time, the gassupplier 234 is also heated from below by radiation from the heater 213,radiation from the substrate mounting stand 212 heated by the heater213, radiation from the heated wafer 200, and the like.

(Substrate Heat Conduction Heating Step: Step e)

Subsequently, the substrate mounting stand 212 is raised, the wafer 200mounted on the lift pins 207 is picked up by the substrate mountingstand 212, the wafer 200 is mounted on the substrate mounting surface211, and the substrate mounting stand 212 is raised to the processingposition of the wafer 200 (wafer processing position) shown in thefigure. At least until the wafer 200 moves from the wafer transferposition to the wafer processing position, the supply of the heatedfirst gas from the first gas supply system 248 is continuouslymaintained, and the wafer 200 is heated from above (front surface side).At this time, the supply of the heated fourth gas from the fourth gassupply system 259 is also maintained. Further, at this time, since thewafer 200 is mounted on the substrate mounting surface 211, the wafer200 is heated from below (rear surface side) by heat conduction from thesubstrate mounting stand 212 heated by the heater 213.

(Gas Supplier Cooling Step: Step d)

After performing the step b and before performing the step c(film-forming process) to be described below, the third gas having atemperature lower than that of the first gas is supplied from the thirdgas supply system 258 into the buffer space 233.

Specifically, the valve 258 d is opened to allow the third gas to flowthrough the gas supply pipe 258 a. A flow rate of the third gas isregulated by the MFC 258 c, and the third gas is supplied into thebuffer space 233 and then is exhausted via the exhaust pipe 263. At thistime, the third gas diffuses in the buffer space 233, and the third gasdiffused in the buffer space 233 comes into contact with the upper wall234 e and the side wall 234 f constituting the buffer space 233.

Processing conditions in the step b are exemplified as follows.

Processing temperature: 50 to 1,000 degrees C., specifically 300 to 600degrees C. in some embodiments

Processing pressure: 10 to 13,333 Pa, specifically 20 to 1,000 Pa insome embodiments

Third gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to 10slm in some embodiments

Third gas supply time: 0.1 to 300 seconds, specifically 1 to 60 secondsin some embodiments

The processing temperature here means the temperature of the wafer 200,that is, the temperature of the wafer 200 when the step d is performedafter going through the step g, the step b, and the step e, and may be atemperature close to the processing temperature in the step c(film-forming process) to be described below or the same temperature asin the step c.

The temperature of the gas supplier 234 may be lowered by supplying thethird gas having the temperature lower than that of the first gas intothe buffer space 233 under the aforementioned processing conditions. Asa result, in the step c (film-forming process) to be described below, itis possible to prevent the second gas from being excessively heated bythe gas supplier 234 to cause unexpected decomposition or the like.Here, the temperature of the gas supplier 234 is lowered to fall withina temperature range such that the characteristics of the second gas donot change significantly. The lower limit of the temperature range maybe a temperature at which aggregation, liquefaction (solidification),and the like of the second gas are unlikely to occur. The upper limit ofthe temperature range may be a temperature at which decomposition of thesecond gas is unlikely to occur. For example, in the step d, the gassupplier 234 may be cooled to a temperature within the range of 100 to600 degrees C., specifically 200 to 400 degrees C. By cooling the gassupplier 234 to such a temperature, it is possible to prevent thecharacteristics (reactivity) of the second gas from changing greatly dueto unexpected decomposition, aggregation, liquefaction (solidification),and the like.

Further, in the step d, in parallel with the supply of the third gasinto the buffer space 233, the internal atmosphere of the buffer space233 may be exhausted via the exhaust pipe 263 in some embodiments. As aresult, it is possible to avoid the third gas of low temperature frombeing supplied to the pre-heated wafer 200, thereby preventing thetemperature of the pre-heated wafer 200 from being lowered.

(Film-Forming Process: Step c)

Then, as the step c, the following steps c1 and c2 are sequentiallyperformed.

[Step c1]

In a step c1, the precursor gas as the second gas is supplied to thewafer 200 in the process chamber 201.

Specifically, the valve 243 d is opened to allow the precursor gas toflow through the gas supply pipe 243 a. A flow rate of the precursor gasis regulated by the MFC 243 c, and the precursor gas is supplied intothe process chamber 201 via the common gas supply pipe 242, the gassupply pipe 241, the shower head buffer chamber 232, and the gassupplier 234 (the through-holes 234 b) and is exhausted via the exhaustpipe 262. In this operation, the precursor gas is supplied to the wafer200 (precursor gas supply). At this time, the valves 246 d and 247 d maybe opened to allow an inert gas to be supplied from each of the gassupply pipes 246 a and 247 a into the process chamber 201.

Processing conditions in the step c1 are exemplified as follows.

Processing temperature: 50 to 1,000 degrees C., specifically 300 to 800degrees C. in some embodiments

Processing pressure: 10 to 1,000 Pa, specifically 20 to 100 Pa in someembodiments

Precursor gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to10 slm in some embodiments

Precursor gas supply time: 0.1 to 120 seconds, specifically 1 to 60seconds, more specifically 1 to 30 seconds in some embodiments

Inert gas supply flow rate (for each gas supply pipe): 0 to 100 slm,specifically 0.0001 to 20 slm, more specifically 0.01 to 10 slm in someembodiments

By supplying the precursor gas, for example, a chlorosilane-based gas,to the wafer 200 under the aforementioned processing conditions, aSi-containing layer containing Cl is formed on the outermost surface ofthe wafer 200 as a base. The Si-containing layer containing Cl is formedby physical adsorption or chemical adsorption of molecules of thechlorosilane-based gas, physical adsorption or chemical adsorption ofmolecules of a substance obtained by partially decomposing thechlorosilane-based gas, deposition of Si due to thermal decomposition ofthe chlorosilane-based gas, and the like on the outermost surface of thewafer 200. The Si-containing layer containing Cl may be an adsorptionlayer (physical adsorption layer or chemical adsorption layer) ofmolecules of the chlorosilane-based gas or molecules of a substanceobtained by partially decomposing the chlorosilane-based gas or may be adeposition layer of Si containing Cl. In the present disclosure, theSi-containing layer containing Cl is also simply referred to as aSi-containing layer.

After the Si-containing layer is formed, the valve 243 d is closed tostop the supply of the precursor gas into the process chamber 201. Then,the interior of the process chamber 201 is vacuum-exhausted to remove agas or the like remaining in the process chamber 201 from the processchamber 201 (purge). At this time, the valve 245 d may be opened toallow an inert gas to be supplied into the process chamber 201. When theinert gas is supplied into the process chamber 201, the inert gas actsas a purge gas.

An example of the precursor gas may include a silane-based gascontaining silicon (Si) as a main element constituting a film formed onthe wafer 200. An example of the silane-based gas may include a gascontaining Si and halogen, that is, a halosilane-based gas. Halogenincludes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), and thelike. An example of the halosilane-based gas may include theaforementioned chlorosilane-based gas containing Si and Cl.

Examples of the precursor gas may include chlorosilane-based gases suchas a monochlorosilane (SiH₃Cl, abbreviation: MCS) gas, a dichlorosilane(SiH₂Cl₂, abbreviation: DCS) gas, a trichlorosilane (SiHCl₃,abbreviation: TCS) gas, a tetrachlorosilane (SiCl₄, abbreviation: STC)gas, a hexachlorodisilane (Si₂Cl₆, abbreviation: HCDS) gas, and anoctachlorotrisilane (Si₃Cl₈, abbreviation: OCTS) gas. One or more ofthese gases may be used as the precursor gas.

Examples of the precursor gas may include fluorosilane-based gases suchas a tetrafluorosilane (SiF₄) gas and a difluorosilane (SiH₂F₂) gas,bromosilane-based gases such as a tetrabromosilane (SiBr₄) gas and adibromosilane (SiH₂Br₂) gas, and iodosilane-based gases such as atetraiodosilane (SiI₄) gas and a diiodosilane (SiH₂I₂) gas, in additionto the chlorosilane-based gas. One or more of these gases may be used asthe precursor gas.

In addition to the aforementioned gases, an example of the precursor gasmay include a gas containing Si and an amino group, that is, anaminosilane-based gas. The amino group is a monovalent functional groupobtained by removing hydrogen (H) from ammonia, primary amine orsecondary amine and may be expressed as —NH₂, —NHR, or —NR₂. Further, Rrepresents an alkyl group, and two R's of —NR₂ may be the same ordifferent.

Examples of the precursor gas may include aminosilane-based gases suchas a tetrakis(dimethylamino)silane (Si[N(CH₃)₂]₄, abbreviation: 4 DMAS)gas, a tris(dimethylamino)silane (Si[N(CH₃)₂]₃H, abbreviation: 3 DMAS)gas, a bis(diethylamino)silane (Si[N(C₂H₅)₂]₂H₂, abbreviation: BDEAS)gas, a bis(tert-butylamino)silane (SiH₂[NH(C₄H₉)]₂, abbreviation: BTBAS)gas, and a (diisopropylamino)silane (SiH₃[N(C₃H₇)₂], abbreviation:DIPAS) gas. One or more of these gases may be used as the precursor gas.

[Step c2]

After the step c1 is completed, the reaction gas as the second gas issupplied to the wafer 200 in the process chamber 201, that is, theSi-containing layer formed on the wafer 200.

Specifically, the valve 244 d is opened to allow the reaction gas toflow through the gas supply pipe 244 a. A flow rate of the reaction gasis regulated by the MFC 244 c, and the reaction gas is supplied into theprocess chamber 201 via the common gas supply pipe 242, the gas supplypipe 241, the shower head buffer chamber 232, and the gas supplier 234(the through-holes 234 b) and is exhausted via the exhaust pipe 262. Inthis operation, the reaction gas is supplied to the wafer 200 (reactiongas supply). At this time, the valves 246 d and 247 d may be opened toallow an inert gas to be supplied from each of the gas supply pipes 246a and 247 a into the process chamber 201. At this time, the reaction gasmay be supplied after being excited into a plasma state by the RPU 244e. In this case, the reaction gas excited into the plasma state by theRPU 244 e is supplied to the wafer 200 in the process chamber 201 viathe common gas supply pipe 242, the gas supply pipe 241, the shower headbuffer chamber 232, and the gas supplier 234 (the through-holes 234 b).

Processing conditions in the step c2 are exemplified as follows.

Processing temperature: 50 to 1,000 degrees C., specifically 300 to 800degrees C. in some embodiments

Processing pressure: 10 to 3,000 Pa, specifically 20 to 1,000 Pa in someembodiments

Reaction gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to10 slm in some embodiments

Reaction gas supply time: 0.1 to 120 seconds, specifically 1 to 60seconds, more specifically 1 to 30 seconds in some embodiments

High-frequency power (plasma power): 10 to 1,000 W

High frequency: 400 KHz to 60 MHz

Other processing conditions may be the same as those of processingconditions as in the step c1. The high-frequency power and the highfrequency are conditions under which plasma is generated when thereaction gas is supplied with being excited into the plasma state by theRPU 244 e.

By supplying the reaction gas, for example, a nitrogen (N)- and hydrogen(H)-containing gas, to the wafer 200 under the aforementioned processingconditions, at least a portion of the Si-containing layer formed on thewafer 200 is nitrided (modified). As a result, a silicon nitride layer(SiN layer) is formed as a layer containing Si and N on the outermostsurface of the wafer 200 as a base. When the SiN layer is formed,impurities such as Cl contained in the Si-containing layer form agaseous substance containing at least Cl during modification reaction ofthe Si-containing layer by using the N- and H-containing gas, anddischarged from the inside of the process chamber 201. As a result, theSiN layer becomes a layer having fewer impurities such as Cl than thoseof the Si-containing layer formed in the step c1.

After the SiN layer is formed, the valve 244 d is closed to stop thesupply of the reaction gas into the process chamber 201. Then, a gas orthe like remaining in the process chamber 201 is removed from the insideof the process chamber 201 (purge) according to the same processingprocedure as the purge in the step c1.

An example of the reaction gas may include a nitriding gas (nitridingagent or nitrogen source). An example of the nitriding gas may includethe aforementioned N- and H-containing gas. The N- and H-containing gasis both a N-containing gas and a H-containing gas. The N- andH-containing gas may contain a N—H bond in some embodiments.

Examples of the reaction gas may include hydrogen nitride-based gasessuch as an ammonia (NH₃) gas, a diazene (N₂H₂) gas, a hydrazine (N₂H₄)gas, and a N₃H₈ gas. One or more of these gases may be used as thereaction gas.

In addition to the aforementioned gases, an example of the reaction gasmay include a nitrogen (N)-, carbon (C)-, and hydrogen (H)-containinggas. Examples of the N-, C-, and H-containing gas may include anamine-based gas and an organic hydrazine-based gas. The N-, C-, andH-containing gas is a N-containing gas, a C-containing gas, and aH-containing gas. Further, the N-, C-, and H-containing gas is a N- andC-containing gas, a N- and H-containing gas, and a C- and H-containinggas.

Examples of the reaction gas may include ethylamine-based gases such asa monoethylamine (C₂H₅NH₂, abbreviation: MEA) gas, a diethylamine((C₂H₅)₂NH, abbreviation: DEA) gas, and a triethylamine ((C₂H₅)₃N,abbreviation: TEA) gas, methylamine-based gas such as a monomethylamine(CH₃NH₂, abbreviation: MMA) gas, a dimethylamine ((CH₃)₂NH,abbreviation: DMA) gas, and a trimethylamine ((CH₃)₃N, abbreviation:TMA) gas, organic hydrazine-based gases such as a monomethylhydrazine((CH₃)HN₂H₂, abbreviation: MMH) gas, a dimethylhydrazine ((CH₃)₂N₂H₂,abbreviation: DMH) gas, and a trimethylhydrazine ((CH₃)₂N₂(CH₃)H,abbreviation: TMH) gas, and the like. One or more of these gases may beused as the reaction gas.

[Performing Cycle Predetermined Number of Times]

By performing a cycle a predetermined number of times (m times, where mis an integer of 1 or more), the cycle including non-simultaneously,that is, without synchronization, preforming the aforementioned steps c1and c2, a film having a predetermined thickness, for example, a SiN filmhaving a predetermined thickness, may be formed on the surface of thewafer 200 as a base. The above cycle may be performed a plurality oftimes in some embodiments. That is, a thickness of the SiN layer formedper cycle is made thinner than a desired film thickness, and theaforementioned cycle may be performed a plurality of times until a filmthickness of a SiN film formed by laminating the SiN layers reaches thedesired film thickness in some embodiments. When the N-, C-, andH-containing gas is used as the reaction gas, for example, a siliconcarbonitride layer (SiCN layer) may be formed by the aforementionedcycle, and a film, for example, a silicon carbonitride film (SiCN film),may be formed on the surface of the wafer 200 by performing theaforementioned cycle a predetermined number of times.

(After-Purge)

After the process of forming the SiN film having the desired thicknesson the wafer 200 is completed, an inert gas as a purge gas is suppliedinto the process chamber 201 from each of the gas supply pipes 246 a,247 a, and 245 a and is exhausted via the exhaust pipe 262. As a result,the interior of the process chamber 201 is purged to remove a gas,reaction by-products, and the like remaining in the process chamber 201from the inside of the process chamber 201 (after-purge). Then, theinternal atmosphere of the process chamber 201 is substituted with theinert gas (inert gas substitution).

(Substrate Cooling Step: Step h)

Subsequently, the third gas is supplied from the third gas supply system258 into the buffer space 233.

Specifically, the valve 258 d is opened to allow the third gas to flowthrough the gas supply pipe 258 a. A flow rate of the third gas isregulated by the MFC 258 c, and the third gas is supplied into thebuffer space 233 and is then supplied to the processed wafer 200 via thethrough-holes 234 a and the process chamber 201.

Processing conditions in the step h are exemplified as follows.

Processing temperature: 50 to 650 degrees C., specifically 20 to 300degrees C. in some embodiments

Processing pressure: 10 to 13,333 Pa, specifically 100 to 10,000 Pa insome embodiments

Third gas supply flow rate: 0.0001 to 100 slm, specifically 0.001 to 10slm in some embodiments

Third gas supply time: 0.1 to 300 seconds, specifically 1 to 60 secondsin some embodiments

By supplying the third gas to the processed wafer 200 under theaforementioned processing conditions, the processed wafer 200 may becooled in the process container 202, that is, in the process chamber201.

Further, in the step h, the processed wafer 200 may be cooled in a statewhere the substrate mounting stand 212 is lowered to mount the processedwafer 200 on the lift pins 207 such that the processed wafer 200 and thesubstrate mounting stand 212 are separated from each other. For example,in the step h, the processed wafer 200 may be cooled in a state wherethe substrate mounting stand 212 is lowered to the wafer transferposition. Further, for example, in the step h, the processed wafer 200may be cooled in a state where the substrate mounting stand 212 is heldat a position at which the processed wafer 200 and the substratemounting stand 212 may be separated from each other, between the waferprocessing position and the wafer transfer position. In this case, byseparating the processed wafer 200 and the substrate mounting stand 212from each other, heat conduction from the substrate mounting stand 212heated by the heater 213 to the processed wafer 200 may be blocked,whereby it possible to further improve a cooling efficiency of the wafer200.

(Substrate Unloading Step)

Subsequently, the substrate mounting stand 212 is lowered to the wafertransfer position, the processed wafer 200 is delivered from thesubstrate mounting stand 212 to the lift pins 207, and the processedwafer 200 is mounted on the lift pins 207. As a result, the processedwafer 200 may be held on the lift pins 207 in the transfer space 203.When the substrate mounting stand 212 is lowered to the wafer transferposition in the step h, this operation is performed in the step h. Afterthe internal pressures of the process chamber 201 and the transfer space203 are regulated to a predetermined pressure, the gate valve 205 isopened. Then, the processed wafer 200 mounted on the lift pins 207 isunloaded out of the transfer space 203 by the transfer mechanism 500 inthe transfer space 203. That is, the processed wafer 200 is transferredfrom the inside of the transfer space 203 into the transfer chamber 600by the transfer mechanism 500.

(3) EFFECTS OF THE PRESENT EMBODIMENT

According to the embodiments, one or more effects set forth below may beachieved.

(a) By performing the step d of lowering the temperature of the gassupplier 234 by supplying the third gas having the temperature lowerthan that of the heated first gas to the gas supplier 234 between thestep b and the step c, it is possible to cool the gas supplier 234heated in the step b, thereby preventing the second gas supplied in thestep c from being excessively heated by the gas supplier 234. As aresult, in the step c, it is possible to prevent unexpecteddecomposition and the like from occurring due to a change in reactioncharacteristics of the second gas, which makes it possible to improve aprocess uniformity for each wafer.

In the step b, by pre-heating the wafer 200 before the step c, it ispossible to shorten the time taken until the temperature of the wafer200 reaches the processing temperature in the step c. As a result, it ispossible to shorten the processing time, thereby increasing a throughputand hence improving a productivity.

(b) In the step b, by heating the wafer 200 from both the front and rearsides, it is possible to increase a temperature rise rate of the wafer200, which makes it possible to shorten the pre-heating time of thewafer 200. Further, by heating the wafer 200 from both the front andrear surfaces, it is possible to reduce a temperature difference betweenthe front surface and the rear surface of the wafer 200, which make itpossible to prevent the wafer 200 from warping due to the temperaturedifference between the front surface and the rear surface of the wafer200.

In the step b, in a state where the wafer 200 is held on the lift pins207, by heating the wafer 200 from the rear surface side by radiationfrom the heater 213 installed at the substrate mounting stand 212,radiation from the substrate mounting stand 212 heated by the heater213, and the like, it is possible to prevent a rapid temperature rise onthe rear surface side of the wafer 200, whereby it possible to reducethe temperature difference between the front surface and the rearsurface of the wafer 200. As a result, it is possible to prevent thewafer 200 from warping due to the temperature difference between thefront surface and the rear surface of the wafer 200, that is, thetemperature on the rear surface side being higher than the temperatureon the front surface side of the wafer 200.

By performing the step b in a state where the wafer 200 is held on thelift pins 207, since the temperature difference between the frontsurface and the rear surface of the wafer 200 may be regulated to besmall, it is possible to prevent the wafer 200 from warping due to thetemperature difference between the front surface and the rear surface ofthe wafer 200. Specifically, in the step b, for example, by raising orlowering the substrate mounting stand 212 with respect to the fixed liftpins 207 by using the elevator 218, it is possible to regulate apositional relationship between the wafer 200 on the lift pins 207 andthe substrate mounting stand 212 (the heater 213), that is, a distancebetween the wafer 200 and the substrate mounting stand 212. As a result,it is possible to finely regulate the temperature on the rear surfaceside of the wafer 200, whereby it possible to finely control atemperature balance between the front surface and the rear surface ofthe wafer 200.

(c) Before the step c, by holding the wafer 200 in a state where thewafer 200 is mounted on the substrate mounting stand 212 and performingthe step e of heating the wafer 200 from the rear surface side by theheat conduction from the substrate mounting stand 212 heated by theheater 213, it is possible to directly heat the wafer 200, which makesit possible to further shorten the pre-heating time.

(d) In the step b, by heating the gas supplier 234 by radiation from theheater 213 installed at the substrate mounting stand 212, radiation fromthe substrate mounting stand 212 heated by the heater 213, radiationfrom the heated wafer 200, and the like, it is possible to preventdeterioration of film characteristics of a film formed on the wafer 200and interface characteristics at an interface between the film and thewafer 200 in the step c. Specifically, for example, in the step b, whenthe wafer 200 is heated, a gas (for example, a H₂O gas) desorbed fromthe wafer 200 may be adsorbed on the gas supplier 234. In this case, inthe step c, this gas may be desorbed from the gas supplier 234 and maybe supplied to the wafer 200, which causes deterioration of the filmcharacteristics of the film formed on the wafer 200 and the interfacecharacteristics at an interface between the film and the wafer 200.Further, a gas desorbed from the gas supplier 234 at the initial stageof the step c affects the interface characteristics at the interfacebetween the wafer 200 and the film formed on the wafer 200, and a gasdesorbed from the gas supplier 234 after the initial stage of the step caffects the film characteristics of the film formed on the wafer 200. Byheating the gas supplier 234 as described above in the step b, it ispossible to prevent the gas desorbed from the wafer 200 from beingadsorbed on the gas supplier 234, whereby it possible to prevent thedeterioration of the aforementioned film characteristics and interfacecharacteristics.

Further, in the step b, the gas supplier 234 may be heated by the firstgas supplied from the first gas supply system 248 and heated by theheater 248 e, whereby in the step c, it is possible to further preventthe deterioration of the film characteristics of the film formed on thewafer 200 and the interface characteristics at the interface between thefilm and the wafer 200. That is, by heating the gas supplier 234 asdescribed above in the step b, it is possible to prevent the gasdesorbed from the wafer 200 from being adsorbed on the gas supplier 234,which makes it possible to prevent the deterioration of theaforementioned film characteristics and interface characteristics.

(e) Before the step a, by performing the step f of heating the gassupplier 234 by radiation from the heater 213 installed at the substratemounting stand 212, radiation from the substrate mounting stand 212heated by the heater 213, and the like, the gas supplier 234 may beheated in advance, and it possible to prevent a gas desorbed from thewafer 200 due to the heating of the wafer 200 at the initial stage ofthe step b from being adsorbed on the gas supplier 234.

In addition, in the step f, the gas supplier 234 may be heated by thefirst gas supplied from the first gas supply system 248 and heated bythe heater 248 e, and furthermore, the gas supplier 234 may also beheated by the fourth gas supplied from the fourth gas supply system 259and heated by the heater 259 e. Therefore, it is possible to prevent thegas desorbed from the wafer 200 due to the heating of the wafer 200 atthe initial stage of the step b from being adsorbed on the gas supplier234.

(f) The distance (distance A) between the gas supplier 234 and thesubstrate mounting stand 212 in the step f may be made smaller (shorter)than the distance (distance B) between the gas supplier 234 and thesubstrate mounting stand 212 in the step c, whereby the heating time ofthe gas supplier 234 may be shortened. That is, by making the distance Ashorter than the distance B, the heating efficiency of the gas supplier234 due to the radiation from the heater 213 in the substrate mountingstand 212, the radiation from the substrate mounting stand 212 heated bythe heater 213, and the like may be improved, whereby it possible toshorten a temperature rise time of the gas supplier 234. Further, in thestep f, since the substrate mounting stand 212 is maintained in a stateof being heated by the heater 213, it is possible to prevent thetemperature of the substrate mounting stand 212 from changing suddenlyeven when the heat of the substrate mounting stand 212 is taken away bythe gas supplier 234.

(g) In the step d, by supplying the third gas to the gas supplier 234from the third gas supply system 258 different from the first gas supplysystem 248, the third gas unheated may be efficiently supplied to thegas supplier 234, whereby it possible to shorten the cooling time of thegas supplier 234.

(h) In the step d, by supplying the third gas to the gas supplier 234without going through the first gas supply system 248, the third gasunheated may be efficiently supplied to the gas supplier 234, whereby itpossible to shorten the cooling time of the gas supplier 234.

(i) In the step d, by maintaining the temperature state of the heater248 e set to a predetermined temperature in the step b, it is possibleto keep a state where the heated first gas may be stably supplied underthe same conditions. As a result, for example, when continuousprocessing is performed on the wafer 200, it is possible to quickly andstably supply the heated first gas under the same conditions as needed.

(j) In the step b, the heated first gas supplied into the buffer space233 is supplied to the wafer 200 via the buffer space 233. In the stepd, the unheated third gas supplied into the buffer space 233 isexhausted via the exhaust pipe 263 installed at the gas supplier 234without being supplied to the wafer 200. As a result, in the step d, itis possible to avoid the wafer 200 from being cooled, while the bufferspace 233 (the gas supplier 234) is being cooled.

(k) Between the step a and the step b, in a state where the wafer 200 isaccommodated in the transfer space 203, by performing the step g ofheating the wafer 200 by supplying the heated fourth gas to the wafer200, a timing of starting pre-heating of the wafer 200 may be madefaster, whereby it possible to shorten the heating time of the wafer200.

(l) After the step c, by performing the step h of cooling the wafer 200by supplying the third gas to the wafer 200, it is possible to cool thewafer 200 in the process container 202 after the film-forming process.As a result, the time taken for the temperature of the processed wafer200 to reach a temperature at which the processed wafer 200 may betransferred may be shortened, whereby it possible to unload theprocessed wafer 200 quickly from the inside of the process container 202(the transfer space 203) after the film-forming process. Further, in thestep h, the processed wafer 200 may be cooled in a state where thesubstrate mounting stand 212 is lowered to mount the processed wafer 200on the lift pins 207 such that the processed wafer 200 and the substratemounting stand 212 are separated from each other. This makes it possibleto further improve the cooling efficiency of the wafer 200.

(m) By using the inert gas as the first gas and the third gas and usingthe processing gas (reactive gas) as the second gas, it is possible toprevent the occurrence of unexpected decomposition and the like due tothe processing gas heated by the gas supplier 234 in the step c, wherebyit possible to improve the film thickness uniformity for each wafer.

(4) MODIFICATIONS

The configuration of the substrate processing apparatus 100 in theembodiments may be changed as in the following modifications describedbelow.

First Modification

FIG. 3 is a schematic configuration view of a main part of the substrateprocessing apparatus 100 in a first modification. Unless otherwisestated, a configuration of the substrate processing apparatus 100 in thefirst modification is the same as the configuration of the substrateprocessing apparatus 100 in the aforementioned embodiments. Constituentelements having the same function and configuration are denoted by thesame reference numerals, and explanation thereof will not be repeated.

The substrate processing apparatus in the first modification shown inFIG. 3 is different from the substrate processing apparatus 100 in theaforementioned embodiments mainly in the following three points. The gassupply pipe 241 in the aforementioned embodiments is configured suchthat the leading end 241 a is disposed while being exposed to the insideof the shower head buffer chamber 232, whereas a gas guide 237 isconnected to a downstream end of a gas supply pipe 240 in the firstmodification. Further, the plurality of through-holes 234 a in theaforementioned embodiments are provided to be adjacent to thethrough-holes 234 b, whereas a plurality of through-holes 234 h in thefirst modification are circumferentially formed at a structure 235circumferentially placed at a lower wall 234 i of the gas supplier 234.Further, the gas supply pipe 236 in the aforementioned embodiments isconfigured so that the downstream end of the gas supply pipe 236 isconnected to the gas introduction hole formed at the upper wall 234 e ofthe gas supplier 234, whereas a gas supply pipe 238 in the firstmodification is configured such that a downstream end of the gas supplypipe 238 is connected to the structure 235.

Specifically, as shown in FIG. 3, the gas guide 237 configured to guidethe second gas supplied from the gas supply pipe 240 into thethrough-holes 234 b is connected to the downstream end of the gas supplypipe 240 in the first modification. In this way, the gas supply pipe 240is in fluid communication with the through-holes 234 b via the gas guide237. The second gas supplied from the gas supply pipe 240 is suppliedinto the through-holes 234 b via the gas guide 237 and is supplied tothe wafer 200 via the through-holes 234 b.

Further, as shown in FIG. 3, the structure 235 configured to supply thefirst gas (heating gas), which is supplied from the gas supply pipe 238,into the through-holes 234 h without being discharged into the bufferspace 233 is connected to the downstream end of the gas supply pipe 238.In this way, the gas supply pipe 238 is in fluid communication with thethrough-holes 234 h via the structure 235. The first gas (heating gas)supplied from the gas supply pipe 238 is supplied into the through-holes234 h via the structure 235 and is supplied to the wafer 200 via theinside of the through-holes 234 h.

In this way, by separating a supply route of the second gas and a supplyroute of the heated first gas without sharing them, it is possible toprevent the supply route of the second gas from being heated by theheated first gas. This makes it possible to shorten the processing timeof the step d.

Further, the plurality of through-holes 234 h are only formedcircumferentially at the structure 235 circumferentially placed at thelower wall 234 i of the gas supplier 234, and the number ofthrough-holes 234 h formed near a central side of the wafer 200 differsfrom the number of through-holes 234 h formed near an outer peripheralside of the wafer 200. Specifically, the number of through-holes 234 hformed near the outer peripheral side of the wafer 200 is larger thanthe number of through-holes 234 h formed near the central side of thewafer 200. With such a configuration, the heated first gas is suppliedmore toward the outer peripheral side of the wafer 200 than toward thecentral side of the wafer 200. Further, the first gas (heating gas)supplied to the outer peripheral side of the wafer 200 may diffuse andthen reach the central side of the wafer 200, such that the temperatureof the first gas supplied to the outer peripheral side of the wafer 200is likely to be higher than the temperature of the first gas supplied tothe central side of the wafer 200. In general, in the substrate mountingstand 212, because heat is conducted from the outer peripheral side ofthe substrate mounting stand 212 toward the wall of the processcontainer 202, the temperature on the outer peripheral side of thesubstrate mounting stand 212 tends to be lower than the temperature onthe central side of the substrate mounting stand 212. When the wafer 200is heated in this state, a temperature difference may occur between thecentral side and the outer peripheral side of the wafer 200, which maycause a warp in the wafer 200. However, since the temperature of thefirst gas supplied to the outer peripheral side of the wafer 200 ishigher than the temperature of the first gas supplied to the centralside of the wafer 200, a wafer in-plane temperature may be made uniform,whereby it possible to prevent the wafer 200 from warping. Further, thethrough-holes 234 h may be formed near the central side of the wafer200. The aforementioned effects may be obtained by making the number ofthrough-holes 234 h near the outer peripheral side of the wafer 200larger than the number of through-holes 234 h near the central side ofthe wafer 200. Further, the aforementioned effects may be obtained whensizes of the through-holes 234 h near the outer peripheral side of thewafer 200 are made larger than sizes of the through-holes 234 h near thecentral side of the wafer 200.

Further, in the modification, the same effects as those of theaforementioned embodiments may be obtained.

Other Embodiments of the Present Disclosure

The embodiments of the present disclosure have been described above indetail. However, the present disclosure is not limited to theaforementioned embodiments, but may be variously modified withoutdeparting from the gist of the present disclosure.

The examples in which the third gas supply system 258 and the first gassupply system 248 are completely independent from each other and thethird gas is supplied to the gas supplier 234 without going through thefirst gas supply system 248 have been described in the aforementionedembodiments. However, the present disclosure is not limited thereto. Forexample, as shown in FIG. 4, the third gas supply system 260 may beconnected to the gas supply pipe 236 (the first gas supply system 248),such that the third gas may be supplied from the third gas supply system260 to the gas supplier 234 via the first gas supply line. Even in sucha case, at least some of the effects described in the aforementionedembodiments can be obtained.

In the aforementioned embodiments, various processes have been describedwithout specifically limiting the gas types of the first gas and thethird gas. For example, the same gas, that is, the same type of gas, maybe used as the first gas and the third gas. That is, gases having thesame molecular structure may be used as the first gas and the third gas.For example, when an inert gas is used as the first gas and the thirdgas, the same inert gas, that is, the inert gas having the samemolecular structure may be used. As a result, gas substitution in theprocess container 202 may be easily performed, thereby improving athroughput. Further, different gases, that is, different types of gases,may be used as the first gas and the third gas. That is, gases havingdifferent molecular structures may be used as the first gas and thethird gas. For example, when an inert gas is used as the first gas andthe third gas, different inert gases, that is, inert gases havingdifferent molecular structures, may be used. As a result, an appropriategas may be selected as the first gas and the third gas according to agoal, thereby increasing a degree of freedom of processing in each step.

The cases where, for example, an inert gas is used as the first gas havebeen described in the aforementioned embodiments. In those cases, it hasalso been described that, for example, the rare gases such as the N₂gas, the Ar gas, the He gas, the Ne gas, and the Xe gas may be used asthe inert gas. It has also been described that the H₂ gas may be used asthe first gas.

Among those gases, at least one selected from the group of the N₂ gas,the H₂ gas, and the He gas as the first gas may be used in someembodiments. These gases have relatively high thermal conductivities,and by using such gases having the high thermal conductivities as thefirst gas, it is possible to shorten the heating time, that is, thetemperature rise time, of the wafer 200 in the step g, the step b, andthe step e and further make the in-plane temperature distribution of thewafer 200 more uniform in a shorter time. Further, the thermalconductivities of these gases is higher in the order of H₂ gas, He gas,and N₂ gas (the thermal conductivity of H₂ gas is the highest), andamong these gases, the thermal conductivities of H₂ gas and He gas aremuch higher than the thermal conductivity of N₂ gas. From these facts,when considering the thermal conductivity, at least one selected fromthe group of H₂ gas and He gas may be used as the first gas in someembodiments. When at least one selected from the group of H₂ gas and Hegas is used as the first gas, the temperature rise time of the wafer 200in the step g, the step b, and the step e can be further shortened ascompared with when the N₂ gas is used as the first gas, whereby itpossible to make the in-plane temperature distribution of the wafer 200more uniform in a shorter time.

Further, by using a reducing gas such as a H₂ gas as the first gas, itis possible not only to shorten the temperature rise time of the wafer200 in the step g, the step b, and the step e but also to effectivelyremove impurities such as natural oxide films formed on the surface ofthe wafer 200 and organic substances existing on the surface of thewafer 200. That is, by using the reducing gas such as the H₂ gas as thefirst gas, it is possible to perform pre-treatment, specificallypre-cleaning, on the wafer 200 before the film-forming process. Thus, itpossible to improve the interface characteristics at the interfacebetween the wafer 200 and the film formed on the wafer 200, which canresult in improvement of electrical characteristics. Further, in thestep f, by supplying the reducing gas such as the H₂ gas as the firstgas into the process chamber 201 via the buffer space 233, it is alsopossible to remove contaminants such as organic substances adhering tothe inside of the buffer space 233 and the inside of the process chamber201 to clean the interior of the buffer space 233 and the interior ofthe process chamber 201. When performing such processes, the reducinggas such as the H₂ gas may be activated, for example, excited into aplasma state to be supplied, and in this case, it is possible to enhancethe effects by each of the aforementioned processes.

Further, the cases where, for example, an inert gas is used as the thirdgas have been described in the aforementioned embodiments. In thosecases, it has also been described that, for example, the rare gases suchas the N₂ gas, the Ar gas, the He gas, the Ne gas, and the Xe gas may beused as the inert gas. It has also been described that the H₂ gas may beused as the third gas.

Among these gases, at least one selected from the group of the N₂ gas,the H₂ gas, and the He gas as the third gas in some embodiments. Thesegases have relatively high thermal conductivities, and by using suchgases having the high thermal conductivities as the third gas, it ispossible to shorten the cooling time of the gas supplier 234 in the stepd. Further, it is possible to shorten the cooling time of the wafer 200in the step h. When considering the thermal conductivity, at least oneselected from the group of H₂ gas and He gas as the third gas in someembodiments. When at least one selected from the group of H₂ gas and Hegas is used as the third gas, the cooling time of the gas supplier 234in the step d may be further shortened as compared with when the N₂ gasis used as the third gas. Further, when at least one selected from thegroup of H₂ gas and He gas is used as the third gas, the cooling time ofthe wafer 200 in the step h may be further shortened as compared withwhen the N₂ gas is used as the third gas.

Further, by using a reducing gas such as the H₂ gas as the third gas, itis possible not only to shorten the cooling time of the wafer 200 in thestep h but also to effectively remove impurities remaining on thesurface and the like of a film formed on the wafer 200. That is, byusing the reducing gas such as the H₂ gas as the third gas, it is alsopossible to perform post-treatment on the wafer 200 after thefilm-forming process. Thus, it possible to improve the filmcharacteristics of the film formed on the wafer 200, which can result inimprovement of the electrical characteristics. Further, in this case,the reducing gas such as the H₂ gas may be activated, for example,excited into a plasma state to be supplied, and in this case, it ispossible to enhance the effects by the aforementioned processes.

The cases where, for example, the inert gas is used as the fourth gashave been described in the aforementioned embodiments. In those cases,it has also been described that, for example, the rare gases such as theN₂ gas, the Ar gas, the He gas, the Ne gas, and the Xe gas may be usedas the inert gas. It has also been described that the H₂ gas may be usedas the fourth gas.

Among these gases, at least one selected from the group of the N₂ gas,the H₂ gas, and the He gas may be used as the fourth gas. These gaseshave relatively high thermal conductivities, and by using such gaseshaving the high thermal conductivities as the fourth gas, it is possibleto shorten the heating time, that is, the temperature rise time, of thewafer 200 in the step g, the step b, and the step e and further make thein-plane temperature distribution of the wafer 200 more uniform in ashorter time. When considering the thermal conductivity, at least oneselected from the group of H₂ gas and He gas may be used as the fourthgas in some embodiments. When at least one selected from the group of H₂gas and He gas is used as the fourth gas, the temperature rise time ofthe wafer 200 in the step g, the step b, and the step e may be furthershortened as compared with when the N₂ gas is used as the fourth gas,whereby it possible to make the in-plane temperature distribution of thewafer 200 more uniform in a shorter time.

Further, by using the reducing gas such as the H₂ gas as the fourth gas,it is possible not only to shorten the temperature rise time of thewafer 200 in the step g, the step b, and the step e but also toeffectively remove impurities such as natural oxide films formed on thesurface of the wafer 200 and organic substances existing on the surfaceof the wafer 200. That is, by using the reducing gas such as the H₂ gasas the fourth gas, it is possible to perform pre-treatment, specificallypre-cleaning, on the wafer 200 before the film-forming process. Thismakes it possible to improve the interface characteristics at theinterface between the wafer 200 and the film formed on the wafer 200,which can result in improvement of the electrical characteristics.Further, in the step f, by supplying the reducing gas such as the H₂ gasas the fourth gas into the process chamber 201 via the buffer space 233,it is also possible to remove contaminants such as organic substancesadhering to the inside of the buffer space 233 and the inside of theprocess chamber 201 to clean the interior of the buffer space 233 andthe interior of the process chamber 201. When performing such processes,the reducing gas such as the H₂ gas may be activated, for example,excited into a plasma state, to be supplied, and in this case, it ispossible to enhance the effects by each of the aforementioned processes.

The examples in which the plurality of through-holes 234 a and 234 b areformed have been described in the aforementioned embodiments. However,the present disclosure is not limited thereto. For example, only onethrough-hole 234 a and only one through-hole 234 b may be formed. Evenin such a case, at least some of the effects described in theaforementioned embodiments may be obtained.

Further, the examples in which the silane-based gas is mainly used asthe precursor gas have been described in the aforementioned embodiments.However, the present disclosure is not limited thereto. For example, byusing a precursor gas containing a metal element such as aluminum (Al),titanium (Ti), hafnium (Hf), zirconium (Zr), tantalum (Ta), molybdenum(Mo), and tungsten (W), a film containing a metal element, such as analuminum nitride film (AlN film), a titanium nitride film (TiN film), ahafnium nitride film (HfN film), a zirconium nitride film (ZrN film), atantalum nitride film (TaN film), a molybdenum nitride film (MoN film),a tungsten nitride film (WN film), an aluminum oxide film (AlO film), atitanium oxide film (TiO film), a hafnium oxide film (HfO film), azirconium oxide film (ZrO film), a tantalum oxide film (TaO film), amolybdenum oxide film (MoO film), a tungsten oxide film (WO film), atitanium oxynitride film (TiON film), a titanium aluminum carbonitridefilm (TiAlCN film), a titanium aluminum carbide film (TiAlC film), or atitanium carbonitride film (TiCN film), may be formed on a substrateaccording to the aforementioned film-forming sequence. Even in such acase, at least some of the effects described in the aforementionedembodiments may be obtained.

Further, the examples in which the silicon nitride film is formed byusing the nitriding gas as the reaction gas have been described in theaforementioned embodiments. However, the present disclosure is notlimited thereto. For example, by using an O-containing gas such as an O₂gas or a C-containing gas such as a propylene (C₃H₆) gas as the reactiongas, a film containing Si, such as a silicon oxide film (SiO film), asilicon carbide film (SiC film), or a silicon oxycarbide film (SiOCfilm), may be formed on the substrate according to the aforementionedfilm-forming sequence. Even in such a case, at least some of the effectsdescribed in the aforementioned embodiments may be obtained.

The examples in which the temperature of the gas supplier 234 isregulated according to the processing conditions including the supplyflow rate, the supply time, and the temperature of the gas set inadvance without measuring the temperature of the gas supplier 234 havebeen described in the aforementioned embodiments. However, the presentdisclosure is not limited thereto. For example, as shown in FIG. 1, athermocouple 290 may be buried in the gas supplier 234 such that thetemperature of the gas supplier 234 may be measured by a temperaturemeasuring part 291 connected to the thermocouple 290. With thisconfiguration, the temperature of the gas supplier 234 may be measured,and each part may be feedback-controlled based on the measuredtemperature data. Such feedback control makes it possible to preciselycontrol the temperature of the gas supplier 234. Further, such a controlmakes it possible to suppress a temperature regulation time from beingprolonged due to occurrence of an overshoot in the temperature of thegas supplier 234, and the like.

The configuration in which one or more selected from the group of theheated inert gas, the reducing gas, and the gas having the high thermalconductivity may be supplied into the buffer space 233 has beendescribed in the aforementioned embodiments. However, the presentdisclosure is not limited to this configuration. For example, as shownin FIG. 5, the gas supply pipe 236 may be connected to the common gassupply pipe 242. With such a configuration, at least some of the effectsdescribed in the aforementioned embodiments can be obtained. Inaddition, the structure of the substrate processing apparatus may besimplified, which makes it possible to facilitate maintenance and reduceapparatus costs.

The cases in which the film-forming process is performed have beendescribed in the aforementioned embodiments. However, the presentdisclosure is not limited thereto. For example, a part of theaforementioned embodiments may be applied to a case of cleaning theinterior of the process container 202. When cleaning, without loading aproduct wafer 200 into the process container 202, for example, the stepg, the step b, and the step d may be performed before the cleaningprocess, and the step h may be performed after the cleaning process. Inthe cleaning process, a F-containing gas such as a fluorine (F₂) gas maybe supplied as a cleaning gas from the gas supply pipe 245 a. Even inthis case, at least some of the effects described in the aforementionedembodiments may be obtained. By the step d performed before the cleaningprocess, it is possible to prevent corrosion and cleaning damage of thegas supplier 234. Further, by the step h performed after the cleaningprocess, it is possible to remove the residual fluorine in the processcontainer 202.

Aspects of the Present Disclosure

Hereinafter, some aspects of the present disclosure will be additionallydescribed as supplementary notes.

Supplementary Note 1

According to some embodiments of the present disclosure, there isprovided a method of manufacturing a semiconductor device, including:

(a) loading a substrate into a process container;

(b) heating the substrate by supplying a first gas, which is heated whenpassing through a first heater installed at a first gas supply line, tothe substrate via a gas supplier;

(c) supplying a second gas, which flows through a second gas supply linedifferent from the first gas supply line, to the substrate mounted on asubstrate mounting table in the process container, via the gas supplier;and

(d) lowering a temperature of the gas supplier by supplying a third gas,which has a temperature lower than that of the first gas, to the gassupplier between (b) and (c).

Supplementary Note 2

In the method of Supplementary Note 1, in (b), the substrate is held ina floating state without being mounted on the substrate mounting table,and the substrate is heated from a rear surface of the substrate by asecond heater installed at the substrate mounting table.

Supplementary Note 3

In the method of Supplementary Note 1 or 2, the method further includes:

(e) holding the substrate in a state of being mounted on the substratemounting table, and heating the substrate from a rear surface by heatconduction from the substrate mounting table heated by a second heaterbefore (c).

Supplementary Note 4

In the method of any one of Supplementary Notes 1 to 3, in (b), the gassupplier is heated by a second heater installed at the substratemounting table.

Supplementary Note 5

In the method of any one of Supplementary Notes 1 to 4, the methodfurther includes: (f) heating the gas supplier by a second heaterinstalled at the substrate mounting table before (a).

Supplementary Note 6

In the method of Supplementary Note 5, a distance between the gassupplier and the substrate mounting table in (f) is made shorter than adistance between the gas supplier and the substrate mounting table in(c).

Supplementary Note 7

In the method of any one of Supplementary Notes 1 to 6, in (d), thethird gas is supplied from a third gas supply line different from thefirst gas supply line to the gas supplier.

Supplementary Note 8

In the method of any one of Supplementary Notes 1 to 7, in (d), thethird gas is supplied from a third gas supply line different from thefirst gas supply line to the gas supplier via the first gas supply line.

Supplementary Note 9

In the method of any one of Supplementary Notes 1 to 8, in (d), thethird gas is supplied from a third gas supply line different from thefirst gas supply line to the gas supplier without flowing through thefirst gas supply line.

Supplementary Note 10

In the method of any one of Supplementary Notes 1 to 9, in (d), atemperature state of the first heater set to a predetermined temperaturein (b) is maintained.

Supplementary Note 11

In the method of any one of Supplementary Notes 1 to 10, in (b), thefirst gas supplied into a buffer space installed at the gas supplier issupplied to the substrate via the buffer space, and in (d), the thirdgas supplied into the buffer space is exhausted via an exhausterinstalled at the gas supplier without being supplied to the substrate.

Supplementary Note 12

In the method of any one of Supplementary Notes 1 to 11, in (b), thefirst gas is supplied to the substrate via a first gas supply portinstalled at the gas supplier and being in fluid communication with thefirst gas supply line, and in (c), the second gas is supplied to thesubstrate via a second gas supply port installed at the gas supplier andbeing in fluid communication with the second gas supply line.

Supplementary Note 13

In the method of any one of Supplementary Notes 1 to 12, the methodfurther includes: (g) heating the substrate by supplying a fourth gas,which is heated when passing through a fourth heater installed at afourth gas supply line, to the substrate in a state where the substrateis accommodated in a transfer chamber installed in the process containerbetween (a) and (b).

Supplementary Note 14

In the method of any one of Supplementary Notes 1 to 13, the methodfurther includes: (h) cooling the substrate by supplying the third gasto the substrate after (c).

Supplementary Note 15

In the method of any one of Supplementary Notes 1 to 14, the gassupplier is configured to face an upper surface of the substrate, and in(b), a temperature of the first gas supplied to an outer peripheral sideof the substrate is made higher than a temperature of the first gassupplied to a central side of the substrate.

Supplementary Note 16

In the method of any one of Supplementary Notes 1 to 15, supply portsconfigured such that the first gas passes through the supply ports andis supplied to the substrate are installed at the gas supplier, and in(b), the first gas is supplied to the substrate via the gas supplierconfigured such that at least one selected from the group of the numberof the supply ports and sizes of the supply ports near a central side ofthe substrate is different from that near an outer peripheral side ofthe substrate.

Supplementary Note 17

In the method of any one of Supplementary Notes 1 to 16, in (b), atleast one selected from the group of a N₂ gas, a H₂ gas, and a He gas isused as the first gas.

Supplementary Note 18

In the method of any one of Supplementary Notes 14 to 17, in (h), atleast one selected from the group of a N₂ gas, a H₂ gas, a He gas, adiluted H₂ gas, and an activated H₂ gas is used as the third gas.

Supplementary Note 19

In the method of any one of Supplementary Notes 1 to 18, an inert gas isused as the first gas and the third gas, and a processing gas (areactive gas) is used as the second gas.

Supplementary Note 20

In the method of any one of Supplementary Notes 1 to 19, the first gasand the third gas are the same gas (the gas having the same type and thesame molecular structure).

Supplementary Note 21

According to other embodiments of the present disclosure, there isprovided a substrate processing apparatus including:

a process container in which a substrate is accommodated;

a transfer mechanism configured to transfer the substrate into theprocess container;

a substrate mounting table configured to mount the substrate in theprocess container;

a gas supplier configured to supply a gas to the substrate in theprocess container;

a first gas supply line including a first heater and being configured tosupply a first gas via the gas supplier;

a second gas supply line configured to supply a second gas via the gassupplier;

a third gas supply line configured to supply a third gas to the gassupplier; and

a controller configured to be capable of controlling the transfermechanism, the first gas supply line, the second gas supply line, andthe third gas supply line to perform each process (each step) ofSupplementary Note 1 in the process container.

Supplementary Note 22

According to other embodiments of the present disclosure, there isprovided a program that causes, by a computer, a substrate processingapparatus to perform each process (each step) of Supplementary Note 1 ora computer-readable storage medium storing the program.

According to the present disclosure in some embodiments, it is possibleto improve a processing uniformity and a throughput for each substrate.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

What is claimed is:
 1. A substrate processing apparatus, comprising: aprocess container in which a substrate is accommodated; a transferdevice configured to transfer the substrate into the process container;a substrate mounting table configured to mount the substrate in theprocess container; a gas supplier configured to supply a gas to thesubstrate in the process container; a first gas supply line including afirst heater and being configured to supply a first gas via the gassupplier; a second gas supply line configured to supply a second gas viathe gas supplier; a third gas supply line configured to supply a thirdgas to the gas supplier; at least one first gas supply port installed atthe gas supplier and being in fluid communication with the first gassupply line; and at least one second gas supply port installed at thegas supplier and being in fluid communication with the second gas supplyline.
 2. The substrate processing apparatus of claim 1, furthercomprising: a second heater installed at the substrate mounting table;and a lift pin configured to hold the substrate over the substratemounting table.
 3. The substrate processing apparatus of claim 1,wherein the third gas supply line is connected to the first gas supplyline.
 4. The substrate processing apparatus of claim 1, wherein thethird gas supply line is connected to the gas supplier in parallel withthe first gas supply line.
 5. The substrate processing apparatus ofclaim 1, wherein the gas supplier includes: a buffer space configured tosupply the first gas to the substrate; and an exhauster configured toexhaust the third gas supplied to the buffer space.
 6. The substrateprocessing apparatus of claim 1, further comprising: a fourth gas supplyline configured to supply a fourth gas to a transfer chamber installedin the process container; and a fourth heater installed at the fourthgas supply line.
 7. The substrate processing apparatus of claim 1,wherein the gas supplier is configured to face an upper surface of thesubstrate, wherein the first gas supply line is connected to a centralside of the gas supplier, and wherein the third gas supply line isconnected to an outer peripheral side of the gas supplier.
 8. Thesubstrate processing apparatus of claim 1, wherein the at least onefirst gas supply port includes one or more ports installed at a centralside to the substrate and one or more ports installed at an outerperipheral side to the substrate, and wherein the one or more portsinstalled at the central side to the substrate and the one or more portsinstalled at the outer peripheral side to the substrate are differentfrom each other in at least one selected from the group of numbers ofthe one or more ports and sizes of the one or more ports.
 9. Thesubstrate processing apparatus of claim 1, wherein the first gas is atleast one selected from the group of a N₂ gas, a H₂ gas, and a He gas.10. The substrate processing apparatus of claim 1, wherein the third gasis at least one selected from the group of a N₂ gas, a H₂ gas, a He gas,a diluted H₂ gas, and an activated H₂ gas.
 11. The substrate processingapparatus of claim 1, wherein the first gas and the third gas are aninert gas, and the second gas is a processing gas.
 12. The substrateprocessing apparatus of claim 1, wherein the first gas and the third gasare the same gas.